RF210价格

参考价格:¥3.1298

型号:RF2103-000 品牌:TE Connectivity / Circui 备注:这里有RF210多少钱,2025年最近7天走势,今日出价,今日竞价,RF210批发/采购报价,RF210行情走势销售排行榜,RF210报价。
型号 功能描述 生产厂家 企业 LOGO 操作

MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and

RFMD

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MEDIUM POWER LINEAR AMPLIFIER

Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and

RFMD

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MEDIUM POWER AMPLIFIER

Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher powe

RFMD

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MEDIUM POWER AMPLIFIER

Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher powe

RFMD

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MEDIUM POWER AMPLIFIER

Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher powe

RFMD

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HIGH POWER LINEAR UHF AMPLIFIER

Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

RFMD

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HIGH POWER LINEAR UHF AMPLIFIER

Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

RFMD

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HIGH POWER LINEAR UHF AMPLIFIER

Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM a

RFMD

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Dual-Band, Image-Reject Downconverters For GSM Applications

The RF210A and RF210B devices are available as a dual-band front end for Global System for Mobile Communications (GSM) handset applications. Both of these highly integrated, monolithic devices are optimized for dual-band use in GSM900/DCS1800 or GSM 900/PCS1900 applications. The devices include tw

CONEXANT

Dual-Band, Image-Reject Downconverters For GSM Applications

The RF210A and RF210B devices are available as a dual-band front end for Global System for Mobile Communications (GSM) handset applications. Both of these highly integrated, monolithic devices are optimized for dual-band use in GSM900/DCS1800 or GSM 900/PCS1900 applications. The devices include tw

CONEXANT

MEDIUM POWER LINEAR AMPLIFIER

文件:215.87 Kbytes Page:10 Pages

RFMD

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MEDIUM POWER LINEAR AMPLIFIER

QORVO

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MEDIUM POWER LINEAR AMPLIFIER

文件:215.87 Kbytes Page:10 Pages

RFMD

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MEDIUM POWER LINEAR AMPLIFIER

文件:215.87 Kbytes Page:10 Pages

RFMD

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MEDIUM POWER AMPLIFIER

QORVO

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HIGH POWER LINEAR UHF AMPLIFIER

QORVO

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RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

亚当科技

RF CONNECTORS

文件:154.14 Kbytes Page:1 Pages

ADAM-TECH

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Thru-Bolts and Mounting Brackets

文件:286.71 Kbytes Page:3 Pages

OHMITE

M8 Female 3 Pin Field Attachable

文件:178.33 Kbytes Page:2 Pages

ALPHAWIRE

Direct replacement for T3 쩌 Midget Edison Screw E10

文件:290.6 Kbytes Page:5 Pages

MARL

Premier Supplier of Electronic Hardware

文件:5.0379 Mbytes Page:60 Pages

ABBATRON

AUTO-DIP짰 Switch Automatically Insertable, Wave Solderable, Board Washable DIP Switch

文件:602.94 Kbytes Page:2 Pages

CTS

西迪斯

RF210产品属性

  • 类型

    描述

  • 型号

    RF210

  • 制造商

    Panasonic Electric Works

  • 功能描述

    Reflector 12.8 x 33.3mm

更新时间:2025-12-22 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RF
24+
NA/
3476
原厂直销,现货供应,账期支持!
RFMD
24+
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RFMD
25+
SOP12
54658
百分百原装现货 实单必成
RF
25+
NA
880000
明嘉莱只做原装正品现货
RFMD
2025+
TSSOP20
3587
全新原厂原装产品、公司现货销售
RFMD
23+
SOP16
8678
原厂原装
CONEXANT
25+
ETSSOP20铁底
18000
原厂直接发货进口原装
RFMD
TSSOP20
686
全新原装100真实现货供应
RFMD
22+
20000
公司只做原装 品质保障
RFMD
20+
SOP16
2960
诚信交易大量库存现货

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