型号 功能描述 生产厂家 企业 LOGO 操作
RF1S70N06SM

70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

Fairchild

仙童半导体

RF1S70N06SM

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

Intersil

RF1S70N06SM

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RF1S70N06SM

N-Channel 60-V (D-S) MOSFET

文件:960.01 Kbytes Page:8 Pages

VBSEMI

微碧半导体

RF1S70N06SM

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

Fairchild

仙童半导体

RF1S70N06SM产品属性

  • 类型

    描述

  • 型号

    RF1S70N06SM

  • 功能描述

    MOSFET TO-263

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
22+
SOT-263
100000
代理渠道/只做原装/可含税
FAIRCHILD/仙童
24+
NA/
3959
原厂直销,现货供应,账期支持!
Infineon
原厂封装
9800
原装进口公司现货假一赔百
FSC/ON
23+
原包装原封 □□
3200
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
INTERSIL
23+
65480
INTERSIL/FSC
NEW
TO-263
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
HAR
23+
NA
2587
专做原装正品,假一罚百!
HAR
99+
TO-263
2800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON
24+
TO-263
8500
原厂原包原装公司现货,假一赔十,低价出售
HARRISCORPORATION
22+
N/A
12245
现货,原厂原装假一罚十!

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