型号 功能描述 生产厂家 企业 LOGO 操作
RF1S40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Fairchild

仙童半导体

RF1S40N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RF1S40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Fairchild

仙童半导体

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Intersil

40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs

文件:413.06 Kbytes Page:8 Pages

Intersil

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

RF1S40N10产品属性

  • 类型

    描述

  • 型号

    RF1S40N10

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-1-2 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HARRIS/哈里斯
99+
TO-263
3311
HAR
23+
RF1S40N10LE
13528
振宏微原装正品,假一罚百
HARRIS
25+23+
TO-263
27143
绝对原装正品全新进口深圳现货
HARRISCORPORATION
21+
NA
12820
只做原装,质量保证
INTERSIL
19+
TO-263
9000
24+
N/A
2340
INTERSIL/FSC
NEW
TO-263
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
HARRIS
22+
TO-263
20000
公司只做原装 品质保障
FAIRCHILD/仙童
2447
D2PAK
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
HARRIS
1923+
TO-263
6896
原装进口现货库存专业工厂研究所配单供货

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