型号 功能描述 生产厂家 企业 LOGO 操作
RF1S40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RF1S40N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RF1S40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Intersil

40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs

文件:413.06 Kbytes Page:8 Pages

Intersil

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

RF1S40N10产品属性

  • 类型

    描述

  • 型号

    RF1S40N10

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERSIL
24+
NA/
2400
优势代理渠道,原装正品,可全系列订货开增值税票
INTERSIL
22+
TO-262
100000
代理渠道/只做原装/可含税
HAR
23+
RF1S40N10LE
13528
振宏微原装正品,假一罚百
HARRIS/哈里斯
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
INTERSIL
23+
TO-262
30000
全新原装现货,价格优势
HARRISCORPORATION
23+
NA
1368
电子元器件供应原装现货. 优质独立分销。原厂核心渠道
INTERSIL
00+
TO-262
2400
INTERLS
23+
TO262
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
INTERSIL
23+
TO-262
4900
原厂原装正品
INTERSIL
23+24
TO-262
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管

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