型号 功能描述 生产厂家 企业 LOGO 操作
RF1S40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Fairchild

仙童半导体

RF1S40N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RF1S40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Fairchild

仙童半导体

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

Intersil

40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs

文件:413.06 Kbytes Page:8 Pages

Intersil

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

RF1S40N10产品属性

  • 类型

    描述

  • 型号

    RF1S40N10

  • 功能描述

    MOSFET 100V Single

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-17 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERSIL
22+
TO-262
100000
代理渠道/只做原装/可含税
INTERSIL
24+
NA/
2400
优势代理渠道,原装正品,可全系列订货开增值税票
HARRIS/哈里斯
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
HARRIS
99+
TO-263
3311
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HAR
23+
RF1S40N10LE
13528
振宏微原装正品,假一罚百
INTERSIL
00+
TO-262
2400
INTERSIL
25+
TO-262
30000
全新原装现货,价格优势
INTERSIL
25+23+
TO-262
27142
绝对原装正品全新进口深圳现货
HARRISCORPORATION
21+
NA
12820
只做原装,质量保证
HARRISCORPORATION
22+
N/A
12245
现货,原厂原装假一罚十!

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