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型号 功能描述 生产厂家 企业 LOGO 操作
RF1S40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

FAIRCHILD

仙童半导体

RF1S40N10

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RF1S40N10

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

ONSEMI

安森美半导体

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

INTERSIL

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regul • 40A, 100V\n• rDS(ON) = 0.040Ω\n• UIS Rating Curve\n• SOA is Power Dissipation Limited\n• 175°C Operating Temperature\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

RENESAS

瑞萨

40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs

文件:413.06 Kbytes Page:8 Pages

INTERSIL

40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs

RENESAS

瑞萨

RF1S40N10产品属性

  • 类型

    描述

  • 型号

    RF1S40N10

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-7-31 10:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTERSIL
19+
TO-263
9000
HARRIS/哈里斯
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
24+
N/A
2340
INTERSIL/FSC
26+
TO-263
28610
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
26+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
HARRIS/哈里斯
2022+
TO-263
3331
原厂代理 终端免费提供样品
HARRIS
最新
TO-263
6896
原装进口现货库存专业工厂研究所配单供货
INTERSIL
26+
TO-262
29840
主营MOS管 二极.三极管 肖特基二极管.功率三极管
INTERSIL
25+
TO-262
20000
本公司 只做全新原装正品
HARRIS
25+23+
TO-263
27143
绝对原装正品全新进口深圳现货

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