位置:首页 > IC中文资料第3580页 > RF1S40N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RF1S40N10 | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | FAIRCHILD 仙童半导体 | ||
RF1S40N10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | ||
RF1S40N10 | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs | ONSEMI 安森美半导体 | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | FAIRCHILD 仙童半导体 | |||
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg | INTERSIL | |||
40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs 文件:413.06 Kbytes Page:8 Pages | INTERSIL | |||
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs | RENESAS 瑞萨 | |||
40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs | RENESAS 瑞萨 |
RF1S40N10产品属性
- 类型
描述
- 型号
RF1S40N10
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
23+ |
RF1S40N10LE |
13528 |
振宏微原装正品,假一罚百 |
|||
HARRIS/哈里斯 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
HARRIS |
23+ |
TO-263 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
HARRIS |
25+23+ |
TO-263 |
27143 |
绝对原装正品全新进口深圳现货 |
|||
HARRISCORPORATION |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
HARRISCORPORATION |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
HARRIS |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
HARRIS/哈里斯 |
25+ |
TO-263 |
30000 |
全新原装现货,价格优势 |
|||
INTERSIL |
19+ |
TO-263 |
9000 |
||||
HARRIS |
99+ |
TO-263 |
3327 |
全新 发货1-2天 |
RF1S40N10芯片相关品牌
RF1S40N10规格书下载地址
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DdatasheetPDF页码索引
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