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REG101价格

参考价格：￥7.8586

型号：REG101NA-2.5/250 品牌：TI 备注：这里有REG101多少钱，2026年最近7天走势，今日出价，今日竞价，REG101批发/采购报价，REG101行情走势销售排行榜，REG101报价。

型号	功能描述	生产厂家企业	LOGO
REG101	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101	具有使能功能的 100mA、10V、低压降稳压器	TI 德州仪器	TI
REG101	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI
REG101	DMOS 100mA Low-Dropout Regulator 文件：277.56 Kbytes Page：13 Pages	TI 德州仪器	TI
REG101UA-2.5	丝印代码：REG101U25；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-2.5.B	丝印代码：REG101U25；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-3	丝印代码：REG101U30；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-3.3	丝印代码：REG101U33；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-3.3.B	丝印代码：REG101U33；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-3.3/2K5	丝印代码：REG101U33；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-3.3/2K5.B	丝印代码：REG101U33；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-3.3SLASH2K5	丝印代码：REG101U33；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-3.3SLASH2K5.B	丝印代码：REG101U33；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-3.B	丝印代码：REG101U30；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-5	丝印代码：REG101U50；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-5.B	丝印代码：REG101U50；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-5/2K5	丝印代码：REG101U50；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-5/2K5.B	丝印代码：REG101U50；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-5SLASH2K5	丝印代码：REG101U50；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-5SLASH2K5.B	丝印代码：REG101U50；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-A	丝印代码：REG101UA；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-A.A	丝印代码：REG101UA；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101UA-A.B	丝印代码：REG101UA；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.5SLASH250	丝印代码：RO1G；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.5SLASH250.B	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.5SLASH3K	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.5SLASH3K.B	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.85SLASH250	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.85SLASH250.B	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.85SLASH3K	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.85SLASH3K.B	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.8SLASH250	丝印代码：RO1E；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-2.8SLASH250.B	丝印代码：RO1E；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH250	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH250.B	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH250G4	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH3K	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH3K.B	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3.3SLASH3KG4	丝印代码：RO1C；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3/250	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3/250.B	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3/3K	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3/3K.B	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3SLASH250	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3SLASH250.B	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3SLASH3K	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-3SLASH3K.B	丝印代码：R01D；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-5SLASH250	丝印代码：RO1B；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-5SLASH250.B	丝印代码：RO1B；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-5SLASH3K	丝印代码：RO1B；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-5SLASH3K.B	丝印代码：RO1B；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH250	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH250.A	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH250.B	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH3K	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH3K.A	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH3K.B	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101NA-ASLASH3KG4	丝印代码：RO1A；DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101XX-YYYYSLASHZZZ	DMOS 100mA Low-Dropout Regulator FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0	TI 德州仪器	TI
REG101_05	DMOS 100mA Low-Dropout Regulator 文件：400.96 Kbytes Page：18 Pages	TI 德州仪器	TI

REG101产品属性

类型
描述
型号
REG101
制造商
TI
制造商全称
Texas Instruments
功能描述
DMOS 100mA Low-Dropout Regulator

REG101供应商更多...

更新时间：2026-3-13 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	REG101UA-2.85	TI	25+	SOIC-8	4658	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市得捷芯城科技有限公司	REG101NA-3.3/250	TI	25+	SOT23-5	7786	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市凌旭科技有限公司	REG101NA-A/3K	TI	2016+	SOT23-5	3229	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市纳艾斯科技有限公司	REG101NA	TI	24+	SOT23-5	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
中天科工半导体（深圳）有限公司	REG101NA-5/3KG4	TI/德州仪器	25+	SOT23-5	38554	TI/德州仪器全新特价REG101NA-5/3KG4即刻询购立享优惠#长期有货	询价
千层芯半导体(深圳)有限公司	REG101NA-3/3K	TI	24+	SOT23-5	5630	TI一级代理原厂授权渠道实单支持	询价
深圳市威雅利发展有限公司	REG101285	BB	12+	SOP-8	61	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市华斯顿科技有限公司	REG101NA-2.5	AD	25+23+	SOT-143	44162	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市华康联电子科技有限公司	REG101NA	TI	23+	NA	20000		询价
深圳市勤思达科技有限公司	REG101285	BB	24+	SOP-8	5000	全新原装正品,现货销售	询价

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DdatasheetPDF页码索引

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REG101价格

REG101产品属性

REG101供应商更多...

REG101芯片相关品牌

REG101规格书下载地址

REG101参数引脚图相关

REG101数据表相关新闻

REG104GA-5保原装超低价出

REG104GA-5/2K5主营TI原装现货

REFAUDIODMA12040PTOBO1

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REG104GA-A/2K5

REF6125IDGKR

DdatasheetPDF页码索引