DMOS 100mA Low-Dropout Regulator

FEATURES NEW DMOS TOPOLOGY: Ultra Low Dropout Voltage: 60mV typ at 100mA Output capacitor NOT required for stability FAST TRANSIENT RESPONSE VERY LOW NOISE: 23μVrms HIGH ACCURACY: ±1.5% max HIGH EFFICIENCY: IGND = 500μA at IOUT = 100mA Not Enabled: IGND = 10nA 2.5V, 2.8V, 2.85V, 3.0

0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER

DESCRIPTION The STB7101, designed for cellular applications (0.9/1.9GHz), uses a 20 GHz FT silicon bipolar process. This IC is a wide range amplifier operating from 900MHz to 1900MHz, in the overall frequencies range the gain flatness is less than 1 dB. The STB7101 is housed in a very small SMD

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Smooth, high torque, roller ratchet handle

文件：254.3 Kbytes Page：3 Pages

Precision Wirewound Resistors

文件：318.25 Kbytes Page：2 Pages