REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35 Ultra Low-Power, High-Precision Voltage Reference

1 Features • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 12 ppm/°C (maximum for −40°C to 105°C) • Output 1/f noise (0.1 Hz to 10 Hz): 3.3 ppmP-P • NR pin to reduce noise • EN pin to reduce shutdown current consumption •

REF35-Q1 Ultra Low-Power, High-Precision Voltage Reference

1 Features • AEC-Q100 qualified with the following results: – Device temperature grade 1: −40°C to 125°C ambient operating temperature range • Ultra-low quiescent current: – 650 nA (typical) • Initial accuracy: ±0.05 (maximum) • Temperature coefficient: – 15 ppm/°C maximum for −40°C to 12

120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems

Description Wolfspeed’s CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 2.9 - 3.8 GHz S-Band radar amplifier applications. The transistor i

Silicon Power Rectifier

Silicon Power Rectifier ● Low Forward Voltage ● Glass to Metal Construction ● Glass Passivated Die ● Excellent Reliability ● VRRM to 1600V ● 1050 Amps Surge Rating

Low Profile Designed for PCB Connections

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RADIAL LEADED INDUCTORS

文件：670.06 Kbytes Page：8 Pages

RADIAL LEADED INDUCTORS

文件：670.06 Kbytes Page：8 Pages