位置：首页 > IC中文资料第328页 > RD10
RD10价格
参考价格：￥0.5200
型号：RD100FM 品牌：NEC 备注：这里有RD10多少钱，2025年最近7天走势，今日出价，今日竞价，RD10批发/采购报价，RD10行情走势销售排行榜，RD10报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode Features •Highbreakdownvoltage(VRRM=400V). •Highreliability. •Easytobemounted,goodheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  |   | |
Low VF ??High-Speed Switching Diode LowVF•High-SpeedSwitchingDiode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •One-pointfixingtypeplasticmoldedpackagefacilitatingeasymountingandheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Ultrahigh-SpeedSwitchingDiode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •One-pointfixingtypeplasticmoldedpackagefacilitatingeasymountingandheatdissipation. •Fastreverserecoverytime. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features •Highbreakdownvoltage(VRRM=600V). •Highreliability. •Easytobemounted,goodheatdissipation. •Fastreverserecoverytime. •Lownoiseatthetimeofreverserecovery. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
MOS FET type transistor specifically designed for HF High power amplifiers applications. DESCRIPTION RD100HHF1isaMOSFETtypetransistorspecificallydesignedforHFHighpoweramplifiersapplications. FEATURES HighpowerandHighGain: Pout>100W,Gp>11.5dB@Vdd=12.5V,f=30MHz HighEfficiency:60typ.onHFBand APPLICATION Foroutputstageofhighpoweramplifie | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES •SharpBreakdowncharacteristic. •Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
Bidirectional Active USB-C™ Cable for USB3.2 (10G) and DP1.3 (8.1G) Features BidirectionalactiveUSB-Ccablecarrying4LDPor2LDPandUSB3.2 -Supportsupto4LofDisplayPortin/out,withsignalconditioningupto8.1Gbps(supportsHBR3,HBR2,HBR,RBRrates) -SupportsUSB3.1in/out,withsignalconditioningupto10Gbps -SupportsUSB2.0(480Mbps) - | ANALOGIXAnalogix Semiconductor, Inc. 硅谷数模硅谷数模半导体有限公司 |  | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW PLANAR TYPE SILICON ZENER DIODES TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES •Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. •TheE24seriesisemployedforthe | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES ZENERDIODES Applications CircuitsforConstantVoltage,ConstantCurrent,Waveformclipper,Surgeabsorber,etc. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
500 mW DHD ZENER DIODE DO-35 DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
400 mW DHD ZENER DIODE DO-34 [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode [NEC] SEMICONDUCTORSELECTIONGUIDE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 3-PIN MINI MOLD TypeRD2.0MWtoRD39MWSeriesare3-PINMiniMoldPackagezenerdiodespossessingallowablepowerdissipationof200mW. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
1W POWER MINI MOLD ZENER DIODE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION TypeRD2.0StoRD120SSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mW. FEATURES •SharpBreakdowncharacteristic. •Vz:AppliedE24standard. APPLICATIONS CircuitforConstantVoltage,ConstantCurrent,W | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES DESCRIPTION TypeRD4.7SLtoRD39SLSeriesare2PINSuperMiniMoldPackagezenerdiodespossessinganallowablepowerdissipationof200mWfeaturinglownoiseandsharpbreakdowncharacteristic.Theyareintendedforuseinaudioequipment,instrumentequipment. FEATURES •LowNoise | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
LOW NOISE SHARP BREAKDOWN CHARACTERISTICS ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
ZENER DIODES 2PIN ULTRA SUPER MINI MOLD SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
1W 100V Zener diode 文件：459.286 Kbytes Page：2 Pages |  | | ||
SURFACE MOUNT SILICON ZENER DIODES 文件：459.277 Kbytes Page：2 Pages | | | ||
1W 10V Zener diode 文件：459.286 Kbytes Page：2 Pages | | | ||
SURFACE MOUNT SILICON ZENER DIODES 文件：459.277 Kbytes Page：2 Pages | | | ||
包装：盒 描述：SWITCH1000A NON-F 4P UL98 开关 断连开关元件 | ETC 知名厂家 | ETC | | |
包装：盒 描述：SWITCH 100A NON-F 3P UL98 开关 断连开关元件 | ETC 知名厂家 | ETC | | |
Old Company Name in Catalogs and Other Documents 文件：334.85 Kbytes Page：10 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
SURFACE MOUNT SILICON ZENER DIODES 文件：453.99 Kbytes Page：2 Pages | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | | | |
ZENER DIODES 文件：92.97 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors |  | | |
Silicon MOSFET Power Transistor 30MHz,100W 文件：267.18 Kbytes Page：8 Pages | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | |
RD10产品属性
- 类型
描述
- 型号
RD10
- 制造商
Block
- 功能描述
Resistance wire 62.4R/m 0.1mm 100g
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
3690 |
原厂直销,现货供应,账期支持! |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO三洋 |
09+ |
TO220F-2 |
440 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STARPOWER |
23+ |
模块 |
10000 |
原装优质现货订货渠道商 |
|||
RENESAS |
25+23+ |
New |
31677 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
24+ |
5000 |
公司存货 |
|||||
SANYO三洋 |
24+ |
TO220F-2 |
5000 |
全新原装正品,现货销售 |
|||
SANYO |
17+ |
TO220F-2 |
6200 |
||||
SUNMATE(森美特) |
2019+ROHS |
SMA(DO-214AC) |
66688 |
森美特高品质产品原装正品免费送样 |
RD10芯片相关品牌
RD10规格书下载地址
RD10参数引脚图相关
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- s7-200
- s7200
- s5230
- s510b
- s1100
- s101
- s007
- rtl8100c
- rs触发器
- rohs指令
- ROHS
- ricoh
- rf开关
- rfid技术
- rfid
- RD11SL
- RD11S
- RD11P
- RD11M
- RD111C1121
- RD1113112R
- RD110S
- RD110P
- RD10UM
- RD10UJ
- RD10SL
- RD10S
- RD10MW
- RD10M50
- RD10M
- RD10L
- RD10ES
- RD10EB7
- RD10EB6
- RD10EB5
- RD10EB4
- RD10EB3
- RD10EB2
- RD10EB1
- RD10EB
- RD10EAB
- RD10E
- RD10731
- RD10721
- RD10711
- RD10361
- RD10161
- RD100S
- RD100P
- RD100FM
- RD100EB
- RD100E
- RD1/4WPT-1K2
- RD1/4WP-91K
- RD1/4WP-910K
- RD1/4WP-8M2
- RD1/4WP-8K2
- RD1/4WP-56R
- RD1/4WP-390R
- RD1/4WP-390K
- RD1/4WP-36K
- RD1/4WP-33K
- RD1/4WP-330R
- RD1/4WP-330K
- RD1/4WP-2R2
- RD1/4WP-2K7
- RD1/4WP-2K2
- RD1/4WP-27K
- RD1/4WP-240K
- RD1/4WP-22R
- RD1/4WP-20K
- RD1/4WP-150R
- RD0506T
- RD0504T
- RD-040
- RD0306T
- RD0106T
- RD0027
- RD0026
- RD0023
- RCWPNM
- RCWPMR
- RCWPM
- RCW-0D
- RCW-0C
- RCVE3
- RCV420
- RCV1551
- RCUCTE
- RCU-0D
- RCU-0C
- RCT6_15
RD10数据表相关新闻
RD07MUS2B
RD07MUS2B
2020-5-14RD04AMS2
RD04AMS2
2020-5-14RD70HUP2
RD70HUP2
2020-5-14RD21XR271K500，RD21ZU224M500W，RD221M10-6X11
RD21XR271K500，RD21ZU224M500W，RD221M10-6X11
2020-5-6RC系列碳纤维组合轴向引线电阻器RC14KT100K
RC系列电阻非常适合脉冲负载处理，提供1/4W和1/2W的功率，5％和10％的容差，以及1Ω至22MΩ的欧姆值
2019-9-11RD13UM-T1原装进口现货
瀚佳科技(深圳)有限公司专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
