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RD01MUS2B

RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W

DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES • High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70Typ @Vdd=

MITSUBISHI

三菱电机

RD01MUS2B

High Frequency Devices-Silicon RF Devices RF High Power MOS FETs (Discrete) RD01MUS2B

MITSUBISHI

三菱电机

Silicon MOSFET Power Transistor 520MHz,1W

DESCRIPTION RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate to source for ESD protection. FEATURES • High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz • High Efficiency: 6

MITSUBISHI

三菱电机

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

文件:209.9 Kbytes Page:7 Pages

MITSUBISHI

三菱电机

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

文件:419.82 Kbytes Page:7 Pages

MITSUBISHI

三菱电机

RD01MUS2B产品属性

  • 类型

    描述

  • Drain Voltage Typ:

    7.2V

  • Freqency:

    527MHz

  • Output Power (Min):

    1W

  • Package:

    SOT-89

  • Input Power (Typ):

    0.03W

  • Drain Efficiency (Min):

    60%

  • Feature:

    built in Gate Protection Diode

  • RoHS Directive:

    2011/65/EU RoHS2 Compliant

更新时间:2026-8-3 15:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MITSUBISHI
24+
SOT-89
39500
进口原装现货 支持实单价优
MITSUBISHI/三菱
25+
SOT-89
880000
明嘉莱只做原装正品现货
MITSUBISHI
22+
SOT-89
20000
公司只做原装 品质保障
Mitsubishi(三菱)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
SMD
25+
NA
15659
振宏微专业只做正品,假一罚百!
MITSUBISH
25+
sot89-3
568
原厂原装渠道刚到新货假一罚十
MITSUBISHI
24+
SMD
3539
长期供应原装现货实单可谈
MITSUBISHI
21+
SOT-89
1574
MITSUBISHI/三菱
26+
SOT-89
12000
只做原装正品
MITSUBISHI/三菱
2022+
6600
只做原装,假一罚十,长期供货。

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