DESCRIPTION

RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

This device has an internal monolithic zener diode from gate to source for ESD protection.

FEATURES

• High power gain:

Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz

• High Efficiency: 65typ.

• Integrated gate protection diode

APPLICATION

For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.