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RD01MUS2B中文资料
RD01MUS2B数据手册规格书PDF详情
DESCRIPTION
RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from gate to source for ESD protection.
FEATURES
• High power gain and High Efficiency.
Pout 1.6W Typ, Gp 15dBTyp, 70Typ @Vdd=7.2V,f=527MHz
• Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RD01MUS2B产品属性
- 类型
描述
- 型号
RD01MUS2B
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MITSUBISHI |
SOT-89 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
MITSUBISHI |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
MITSUBISHI/三菱 |
24+ |
SOT-89 |
4 |
只做原厂渠道 可追溯货源 |
|||
MITSUBISHI |
24+ |
SOT-89 |
39500 |
进口原装现货 支持实单价优 |
|||
MITSUBISHI/三菱 |
25+ |
SOT-89 |
880000 |
明嘉莱只做原装正品现货 |
|||
MITSUBISHI/三菱 |
24+ |
45000 |
原装现货假一赔十 |
||||
MITSUBISHI/三菱 |
2021+ |
15000 |
十年专营原装现货,假一赔十 |
||||
MITSUBISHI/三菱 |
19+ |
SOT-89 |
1000 |
进口原装现货假一赔万力挺实单 |
|||
MITSUBISHI |
23+ |
SOT-89 |
1002 |
全新原装正品现货,支持订货 |
|||
MITSUBISHI |
24+ |
SOT-89 |
56000 |
公司进口原装现货 批量特价支持 |
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RD01MUS2B 芯片相关型号
Datasheet数据表PDF页码索引
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