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RD01MUS2B中文资料
RD01MUS2B数据手册规格书PDF详情
DESCRIPTION
RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
This device has an internal monolithic zener diode from gate to source for ESD protection.
FEATURES
• High power gain and High Efficiency.
Pout 1.6W Typ, Gp 15dBTyp, 70Typ @Vdd=7.2V,f=527MHz
• Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RD01MUS2B产品属性
- 类型
描述
- 型号
RD01MUS2B
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W
更新时间：2025-12-2 14:01:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI |
SOT-89 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
MITSUBISHI |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
MITSUBISHI/三菱 |
24+ |
SOT-89 |
66000 |
只售原装现货 |
|||
MITSUBISHI |
24+ |
SOT-89 |
39500 |
进口原装现货 支持实单价优 |
|||
MITSUBISHI/三菱 |
25+ |
SOT-89 |
880000 |
明嘉莱只做原装正品现货 |
|||
Mitsubishi(三菱) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
MITSUBISHI |
24+ |
SMD |
3539 |
长期供应原装现货实单可谈 |
|||
MITSUBISHI |
21+ |
SOT-89 |
1574 |
||||
MITSUBISHI |
21+ |
假一赔十 |
3 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MITSUBISHI |
SOT-89 |
3539 |
一级代理 原装正品假一罚十价格优势长期供货 |
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Datasheet数据表PDF页码索引
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