125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class A

125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class A

RF Power Field Effect Transistors

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RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

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RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

文件：362.29 Kbytes Page：12 Pages