RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

文件：362.29 Kbytes Page：12 Pages

RF Power Field Effect Transistors

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1930-1990 MHz, 125 W, 26 V Lateral N-Channel RF Power MOSFETs

RF Power Field Effect Transistors

文件：415.75 Kbytes Page：12 Pages

封装/外壳：NI-880 包装：散装 描述：FET RF 65V 1.93GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-880 包装：卷带（TR） 描述：FET RF 65V 1.93GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

文件：362.29 Kbytes Page：12 Pages

RF Power Field Effect Transistors

文件：415.75 Kbytes Page：12 Pages

RF Sub-Micron MOSFET Line N-Channel Enhancement-Mode Lateral MOSFETs

文件：362.29 Kbytes Page：12 Pages

Portable Cordage, 3 C #18 Str BC, EPDM Ins, Rubber Jkt, UL Type SJ

Product Description Portable Cordage, 3 Conductor 18AWG (42x34) Bare Copper, EPDM Insulation, Rubber Outer Jacket, UL Type SJ

125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class A

125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class A

125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class A

Digitally-Enhanced Power Analog Synchronous Low-Side Dual-Loop PWM Controller

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