HiPerFET Power MOSFETs

Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC con

HiPerFET Power MOSFETs

Single MOSFET Die Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC con

High Current MegaMOSFET

High Current MegaMOS™ FET N-Channel Enhancement Mode Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications • Motor controls • DC choppers • Switched-mode power supplies Advantages • Easy to

Switching (250V, 12A)

Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. Application Switching

THREE-TERMINAL LOW-DROPOUT POSITIVE-VOLTAGE REGULATOR (OUTPUT CURRENT: 0.3 A)

The µPD120Nxx series provides low-voltage output regulators with the output current capacitance of 0.3 A. The output voltage varies according to the product (1.5 V, 1.8 V, 2.5 V, or 3.3 V). The circuit current is low due to the CMOS structure, so the powerconsumption in the ICs can be reduced.