RC28F256价格

参考价格:¥30.1271

型号:RC28F256P30BFE 品牌:Micron 备注:这里有RC28F256多少钱,2025年最近7天走势,今日出价,今日竞价,RC28F256批发/采购报价,RC28F256行情走势销售排行榜,RC28F256报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

Intel

英特尔

Intel StrataFlash Embedded Memory

Introduction This document provides information about the Intel StrataFlash® Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features ■ High performance — 85/88 ns initial access — 40 MHz with zero wait states, 20 ns clock-to data output

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash짰 Memory

文件:990.7 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

封装/外壳:64-TBGA 包装:托盘 描述:IC FLASH 256MBIT PAR 64EASYBGA 集成电路(IC) 存储器

ETC

知名厂家

Parallel NOR Flash

Micron

美光

Parallel NOR Flash

Micron

美光

封装/外壳:64-TBGA 包装:卷带(TR) 描述:IC FLASH 256MBIT PAR 64EASYBGA 集成电路(IC) 存储器

ETC

知名厂家

PARALLEL 256M X16 TBGA

Micron

美光

Parallel NOR Flash Embedded Memory

文件:855.4 Kbytes Page:75 Pages

Micron

美光

Parallel NOR Flash Embedded Memory

文件:855.4 Kbytes Page:75 Pages

Micron

美光

Parallel NOR Flash Embedded Memory

文件:855.4 Kbytes Page:75 Pages

Micron

美光

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.36605 Mbytes Page:98 Pages

Micron

美光

Numonyx StrataFlash Embedded Memory

文件:1.39934 Mbytes Page:99 Pages

NUMONYX

Micron Parallel NOR Flash Embedded Memory (P30-65nm)

文件:1.36605 Mbytes Page:98 Pages

Micron

美光

256Mb and 512Mb (256Mb/256Mb), P30-65nm

文件:1.35186 Mbytes Page:95 Pages

Micron

美光

Numonyx StrataFlash Embedded Memory

文件:1.39934 Mbytes Page:99 Pages

NUMONYX

256Mb and 512Mb (256Mb/256Mb), P30-65nm

文件:1.35186 Mbytes Page:95 Pages

Micron

美光

256Mb and 512Mb (256Mb/256Mb), P30-65nm

文件:1.35186 Mbytes Page:95 Pages

Micron

美光

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr

AMD

超威半导体

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F256A is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F256A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be r

AMD

超威半导体

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int

STMICROELECTRONICS

意法半导体

256K(32K x8, Chip Erase)FLASH MEMORY

STMICROELECTRONICS

意法半导体

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr

AMD

超威半导体

RC28F256产品属性

  • 类型

    描述

  • 型号

    RC28F256

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    Intel StrataFlash Memory(J3)

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL/英特尔
24+
NA/
864
优势代理渠道,原装正品,可全系列订货开增值税票
INTEL(英特尔)
24+
标准封装
12048
原厂渠道供应,大量现货,原型号开票。
INTEL
2016+
BGA
12322
只做原装,假一罚十,公司可开17%增值税发票!
INTEL
24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INTEL/英特尔
24+
BGA64
880000
明嘉莱只做原装正品现货
INTEL
22+
BGA
20000
公司只做原装 品质保障
INTEL
BGA64
9850
一级代理 原装正品假一罚十价格优势长期供货
MICRON
原厂封装
9800
原装进口公司现货假一赔百
Micron Technology Inc.
21+
90-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
INTEL
25+
BGA
30000
代理全新原装现货,价格优势

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