型号 功能描述 生产厂家 企业 LOGO 操作

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

Intel

英特尔

3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

FLASH MEMORY

GENERAL DESCRIPTION The MT28F160C3 is a nonvolatile, electrically blockerasable (flash), programmable, read-only memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C3 is manufactured on 0.22µm process technology in a 48-ball FBGA package. The device has an I/O

Micron

美光

16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

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16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

文件:417.03 Kbytes Page:44 Pages

MCNIX

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RC28F160C3BA产品属性

  • 类型

    描述

  • 型号

    RC28F160C3BA

  • 功能描述

    IC FLASH 16MBIT 110NS 64BGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    150

  • 系列

    - 格式 -

  • 存储器

    EEPROMs - 串行

  • 存储器类型

    EEPROM

  • 存储容量

    4K(2 x 256 x 8)

  • 速度

    400kHz

  • 接口

    I²C,2 线串口

  • 电源电压

    2.5 V ~ 5.5 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    8-VFDFN 裸露焊盘

  • 供应商设备封装

    8-DFN(2x3)

  • 包装

    管件

  • 产品目录页面

    1445(CN2011-ZH PDF)

更新时间:2026-1-2 8:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL
23+
BGA
8560
受权代理!全新原装现货特价热卖!
INTEL/英特尔
24+
NA/
3345
原厂直销,现货供应,账期支持!
SONY
23+
CCD镜片
12000
全新原装假一赔十
INTEL
24+
BGA64
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INTEL
25+23+
BGA
12223
绝对原装正品全新进口深圳现货
INTEL
BGA
192
正品原装--自家现货-实单可谈
INTEL
17+
BGA
6200
100%原装正品现货
INTEL
24+
210
INTEL(英特尔)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
INTEL
22+
BGA
20000
公司只做原装 品质保障

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