2.0A WOM BRIDGE RECTIFIERS

2.0A WOM BRIDGE RECTIFIERS

SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE：50-1000V CURRENT：2.0A FEATURES · Surge overload ratings-50 Amperes · Good for printed circuit board assembly

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES * Surge overload ratings to 50 Amperes peak * Ideal for printed circuit board assembly

SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT1.5 Amperes FEATURES Low cost This series is UL recognized under component index,file number E127707 High forward surge current capability Ideal for printed circuit board High temperature soldering guaranteed: 260℃/10 second, 0.375”(9.5m

SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES Low cost This series is UL recognized under component index,file number E127707 High forward surge current capability Ideal for printed circuit board High temperature soldering guaranteed: 260℃/10 second, 0.375”(9.5

SILICON BRIDGE RECTIFIERS Reverse Voltage - 50 to 1000 Vo lts Forward Current - 2.0 Amperes

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes FEATURES ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Ideal for printed circuit boards ♦ Low reverse leakage ♦ High forward surge current capability ♦ High tempera

2.0A BRIDGE RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

Bridge Rectifiers

SILICON BRIDGE RECTIFIERS

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SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes)

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P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.