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RBV806

SILICON BRIDGE RECTIFIERS

FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RBV806

SILICON BRIDGE RECTIFIERS

FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free

SYNSEMI

RBV806

Silicon Bridge Rectifiers

Features ◇ Rating to 1000V PRV ◇ Surge overload rating to 300 Am peres peak ◇ Ideal for printed circuit board ◇ Reliable low cost construction utilizing m olded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 m ethod 208

LUGUANG

鲁光电子

RBV806

SILICON BRIDGE RECTIFIERS

文件:99.82 Kbytes Page:2 Pages

DSK

RBV806

SILICON BRIDGE RECTIFIERS

文件:20.76 Kbytes Page:2 Pages

EIC

RBV806

SILICON BRIDGE RECTIFIERS

文件:50.76 Kbytes Page:2 Pages

EIC

RBV806

SILICON BRIDGE RECTIFIERS

文件:98.89 Kbytes Page:2 Pages

EIC

SILICON BRIDGE RECTIFIERS

PRV: 50-1000 Volts lo : 8.0 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb/RoHSFree

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Molding Single-Phase Bridge Rectifier

100 V ~ 1000 V 10.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier FEATURES Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 This Series is UL listed under the Recognized Component index, file number E231047 Single-in-line p

SECOS

喜可士

SILICON BRIDGE RECTIFIERS

文件:98.62 Kbytes Page:2 Pages

EIC

SILICON BRIDGE RECTIFIERS

文件:50.74 Kbytes Page:2 Pages

EIC

SILICON BRIDGE RECTIFIERS

文件:19.6 Kbytes Page:2 Pages

EIC

POWER TRANSISTORS(8.0A,150-200V,60W)

MOSPEC

统懋

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

MOTOROLA

摩托罗拉

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

PANJIT

強茂

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

PANJIT

強茂

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)

NEC

瑞萨

RBV806产品属性

  • 类型

    描述

  • 型号

    RBV806

  • 制造商

    EIC

  • 制造商全称

    EIC discrete Semiconductors

  • 功能描述

    SILICON BRIDGE RECTIFIERS

更新时间:2026-8-2 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
PANJIT
23+
扁桥
80000
主营桥堆系列,真实库存

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