位置:首页 > IC中文资料第8084页 > RBV806D

型号 功能描述 生产厂家 企业 LOGO 操作
RBV806D

SILICON BRIDGE RECTIFIERS

PRV: 50-1000 Volts lo : 8.0 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb/RoHSFree

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RBV806D

SILICON BRIDGE RECTIFIERS

文件:19.6 Kbytes Page:2 Pages

EIC

RBV806D

SILICON BRIDGE RECTIFIERS

文件:50.74 Kbytes Page:2 Pages

EIC

RBV806D

SILICON BRIDGE RECTIFIERS

文件:98.62 Kbytes Page:2 Pages

EIC

POWER TRANSISTORS(8.0A,150-200V,60W)

MOSPEC

统懋

8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS

This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tc = 1.0 µs (max) • Low Saturation Voltage: VCE(sat) = 1.5 V (max) • Packaged in JEDEC TO–220AB • Da

MOTOROLA

摩托罗拉

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

PANJIT

強茂

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes)

VOLTAGE - 200 to 600 Volts CURRENT - 8.0 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O •

PANJIT

強茂

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.4 pF TYP. • Built-in 2 Transistors (2 × 2SC4959)

NEC

瑞萨

RBV806D产品属性

  • 类型

    描述

  • 型号

    RBV806D

  • 制造商

    EIC

  • 制造商全称

    EIC discrete Semiconductors

  • 功能描述

    SILICON BRIDGE RECTIFIERS

RBV806D数据表相关新闻