丝印代码：D3C；Schottky Barrier Diode

●Features High reliability Small mold type Super Low VF ●Application Small current rectification

Schottky Barrier Diodes (支持 AEC-Q101)

车载肖特基二极管与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。 •小型塑胶型。\n•低IR型、高可靠性。;

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ROHM'S SCHOTTKY BARRIER DIODES A 分立半导体产品 二极管 - 整流器 - 单

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

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