丝印代码：R8011KNZ4；Nch 800V 11A Power MOSFET

Features 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compliant Application Switching

丝印代码：R8019KNZ4；Nch 800V 19A Power MOSFET

Features 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free lead plating ; RoHS compliant Application Switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

高速开关规格 Nch 800V 11A 功率MOSFET

R8xxxKNx系列是重视高效性，以高速开关性能为特点的Super Junction MOSFET产品。该系列产品可在追求高速开关的应用中实现高性能。高速开关性能有助于实现PFC和LLC等电路的高效率化。 • Low on-resistance\n• Ultra fast switching speed\n• Parallel use is easy\n• Pb-free plating ; RoHS compliant;

Nch 800V 11A, TO-247AD, High-speed switching Power MOSFET

The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits. • Low on-resistance\n• Fast switching\n• Parallel use is easy\n• Pb-free lead plating ; RoHS compliant;

High Integration 16-Bit Microprocessor iAPX86 Family

High Integration 16-Bit Microprocessor iAPX86 Family

High Integration 16-Bit Microprocessor iAPX86 Family

High Integration 16-Bit Microprocessor iAPX86 Family

High Integration 8-Bit Microprocessor

High Integration 16-Bit Microprocessor iAPX86 Family

High Integration 8-Bit Microprocessor

High Integration 16-Bit Microprocessor iAPX86 Family

High Integration 8-Bit Microprocessor

High Integration 16-Bit Microprocessor iAPX86 Family

isc N-Channel MOSFET Transistor

文件：296.26 Kbytes Page：2 Pages

Nch 800V 10A Power MOSFET

文件：885.86 Kbytes Page：14 Pages

High Integration 16-Bit Microprocessor iAPX86 Family

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead