PHOTOMULTIPLIER TUBE

PHOTOMULTIPLIER TUBE For an Operation in Magnetic Fields over 1Tesla 64 mm (2.5 Inch) Head-On, Fast Time Response, High Pulse Linearity 19-stage Fine Mesh Dynodes, Bialkali Photocathode

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 4.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variatio

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 4.0A@ TC=25℃ Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variatio

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 4.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variatio

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 4.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variatio

Nch 650V 4A Power MOSFET

文件：2.23874 Mbytes Page：14 Pages

650V 4A TO-252, 低噪声规格 功率MOSFET

Nch 650V 4A 功率MOSFET

Nch 650V 4A Power MOSFET

文件：2.2226 Mbytes Page：14 Pages

Nch 650V 4A 功率MOSFET

Security & Sound, #22-6c BC, CMP

Product Description Security & Sound Cable, Plenum-CMP 6-22 AWG stranded bare copper conductors with Flamarrest® insulation, Flamarrest® jacket with ripcord

Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switches in SOT-23

GENERAL DESCRIPTION The ADT6501/ADT6502/ADT6503/ADT6504 are trip point temperature switches available in a 5-lead SOT-23 package. Each part contains an internal band gap temperature sensor for local temperature sensing. When the temperature crosses the trip point setting, the logic output is ac

Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switches in SOT-23

GENERAL DESCRIPTION The ADT6501/ADT6502/ADT6503/ADT6504 are trip point temperature switches available in a 5-lead SOT-23 package. Each part contains an internal band gap temperature sensor for local temperature sensing. When the temperature crosses the trip point setting, the logic output is ac

Low Cost, 2.7 V to 5.5 V, Micropower Temperature Switches in SOT-23

GENERAL DESCRIPTION The ADT6501/ADT6502/ADT6503/ADT6504 are trip point temperature switches available in a 5-lead SOT-23 package. Each part contains an internal band gap temperature sensor for local temperature sensing. When the temperature crosses the trip point setting, the logic output is ac

Security & Sound, #22-6c BC, Shielded, CMP

文件：247.61 Kbytes Page：2 Pages