LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR

Description The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package. Features ■ NPN Silicon Phototransistor with internal base-emitter resistance ■ Package Type: Sidelooker ■ Medium Reception Angle, 50° ■ C

Low Light Rejection Plastic Silicon Infrared PhotoTransistor

文件：56.88 Kbytes Page：3 Pages

封装/外壳：径向，侧视图 描述：SENSOR PHOTO 880NM SIDE VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR

Low Light Rejection Plastic Silicon Infrared PhotoTransistor

文件：56.88 Kbytes Page：3 Pages

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —