PLASTIC SILICON INFRARED PHOTOTRANSISTOR

Description The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package. Features ■ Tight production distribution ■ Steel lead frames for improved reliability in solder mounting ■ Good optical-to-mechanical alignment ■ Plastic package is infrare

Plastic Silicon Infrared Phototransistor

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Plastic Silicon Infrared Phototransistor

文件：152.93 Kbytes Page：4 Pages

Plastic Silicon Infrared Phototransistor

文件：153.88 Kbytes Page：4 Pages

PLASTIC SILICON PHOTOTRANSISTOR

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封装/外壳：径向，3mm 直径（T-1） 包装：卷带（TR） 描述：SENSOR PHOTO 880NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

PLASTIC SILICON PHOTOTRANSISTOR

Plastic Silicon Infrared Phototransistor

文件：510.84 Kbytes Page：4 Pages

Plastic Silicon Infrared Phototransistor

文件：152.93 Kbytes Page：4 Pages

封装/外壳：径向，3mm 直径（T-1） 描述：SENSOR PHOTO 880NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

Plastic Silicon Infrared Phototransistor

文件：153.88 Kbytes Page：4 Pages

JFET Chopper Transistor (N-Channel- Depletion)

JFET Chopper Transistor N–Channel — Depletion

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

POWER TRANSISTORS(2.0A,60-100V,50W)

Operational Amplifiers

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