1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features • Frequency: 0.96 to 1.215 GHz • Output Power (P3dB)1: 1862 W • Linear Gain1: 22.5 dB • Typical PAE3dB 1: 77.2 • Operating Voltage: 65 V • CW and Pulse capable

1800 Watt, 65 Volt, 1.0 - 1.1 GHz, GaN RF Input-Matched Transistor

The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and te • Frequency Range: .96 to 1.215 GHz\n• Output Power (P3dB1): 1862 Watt\n• Linear Gain: 22.5 dB\n• Typical PAE3dB1: 77.2 %\n• Operating voltage: 65 V\n• CW and Pulse capable;

1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

文件：1.43585 Mbytes Page：18 Pages

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features • Frequency: 0.96 to 1.215 GHz • Output Power (P3dB)1: 1862 W • Linear Gain1: 22.5 dB • Typical PAE3dB 1: 77.2 • Operating Voltage: 65 V • CW and Pulse capable

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features Frequency: 0.96 to 1.215 GHz Output Power (P3dB)1: 1862 W Linear Gain1: 22.5 dB Typical PAE3dB 1: 77.2 Operating Voltage: 65 V CW and Pulse capable

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features Frequency: 0.96 to 1.215 GHz Output Power (P3dB)1: 1862 W Linear Gain1: 22.5 dB Typical PAE3dB 1: 77.2 Operating Voltage: 65 V CW and Pulse capable

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features Frequency: 0.96 to 1.215 GHz Output Power (P3dB)1: 1862 W Linear Gain1: 22.5 dB Typical PAE3dB 1: 77.2 Operating Voltage: 65 V CW and Pulse capable

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

Key Features Frequency: 0.96 to 1.215 GHz Output Power (P3dB)1: 1862 W Linear Gain1: 22.5 dB Typical PAE3dB 1: 77.2 Operating Voltage: 65 V CW and Pulse capable

1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

文件：1.43585 Mbytes Page：18 Pages

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

文件：3.15518 Mbytes Page：27 Pages

1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

文件：1.43879 Mbytes Page：18 Pages

1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

文件：1.43879 Mbytes Page：18 Pages

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

文件：3.15518 Mbytes Page：27 Pages

1800 W, 65 V, 0.96 ??1.215GHz, GaN RF Input-Matched Transistor

文件：3.15518 Mbytes Page：27 Pages

1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

文件：1.43879 Mbytes Page：18 Pages

1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor

文件：1.43585 Mbytes Page：18 Pages

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1025 series is supplied in the SOD59 (TO220AC) conventional leaded package. FEATURES • Low forward volt drop • Fast switching • Reverse sur

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1025B series is supplied in the SOT404 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1025D series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt d

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package. FEATURES • Very low RDSon at low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • DC-DC converters • Gene

Data amplifier and laser supply circuit for CD audio and video optical systems ADALASLC

文件：122.8 Kbytes Page：16 Pages