500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET

Key Features • Frequency: 2.7 to 3.1 GHz • Output Power (P3dB)1: 575 W • Linear Gain1: 17.7 dB • Typical PAE3dB 1: 67.9 • Operating Voltage: 50 V • Low thermal resistance package • Pulse capable

500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET

The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar.\nLead-free and ROHS compliant.\nEva • Frequency Range: 2.7 - 3.1 GHz\n• Output Power (P3dB): 575 W at 2.9 GHz\n• Linear Gain: 17.7 dB typical at 2.9 GHz\n• Typical PAE3dB: 67.9 % at 2.9 GHz\n• Operating Voltage: 50V\n• Low Thermal Resistance Package\n• Pulse Capable;

500W, 50V, 2.7 ??3.1 GHz, GaN RF IMFET

文件：1.82765 Mbytes Page：17 Pages

500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET

Key Features • Frequency: 2.7 to 3.1 GHz • Output Power (P3dB)1: 575 W • Linear Gain1: 17.7 dB • Typical PAE3dB 1: 67.9 • Operating Voltage: 50 V • Low thermal resistance package • Pulse capable

500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET

Key Features • Frequency: 2.7 to 3.1 GHz • Output Power (P3dB)1: 575 W • Linear Gain1: 17.7 dB • Typical PAE3dB 1: 67.9 • Operating Voltage: 50 V • Low thermal resistance package • Pulse capable

500W, 50V, 2.7 ??3.1 GHz, GaN RF IMFET

文件：1.82765 Mbytes Page：17 Pages

500W, 50V, 2.7 ??3.1 GHz, GaN RF IMFET

文件：1.82765 Mbytes Page：17 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3