| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
QPD1018EVB | 500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET Key Features • Frequency: 2.7 to 3.1 GHz • Output Power (P3dB)1: 575 W • Linear Gain1: 17.7 dB • Typical PAE3dB 1: 67.9 • Operating Voltage: 50 V • Low thermal resistance package • Pulse capable | QORVO 威讯联合 | ||
QPD1018EVB | 500W, 50V, 2.7 ??3.1 GHz, GaN RF IMFET 文件:1.82765 Mbytes Page:17 Pages | TRIQUINT | ||
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. | POLYFET | |||
Power Manager Gallium Arsenide Power Rectifier Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C | MOTOROLA 摩托罗拉 | |||
Power Manager Gallium Arsenide Power Rectifier Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C | MOTOROLA 摩托罗拉 | |||
N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A | PHILIPS 飞利浦 | |||
Low-voltage dual frequency synthesizer for radio telephones GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 | PHILIPS 飞利浦 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
QORVO |
2023+ |
SMD |
7868 |
十五年行业诚信经营,专注全新正品 |
|||
QORVO |
2450+ |
QFN |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
QORVO |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
QORVO |
24+ |
NA |
39500 |
进口原装现货 支持实单价优 |
|||
Qorvo(威讯联合) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
QORVO |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Qorvo |
25+ |
原封装 |
66000 |
郑重承诺只做原装进口现货 |
|||
Qorvo |
24+ |
DFN-6 |
3280 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
QORVO |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
QORVO |
25+ |
QFN |
90000 |
全新原装现货 |
QPD1018EVB规格书下载地址
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DdatasheetPDF页码索引
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