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QM6015D

P-Ch 60V Fast Switching MOSFETs

The QM6015D is the highest performance trenchP-ch MOSFETs with extremehigh cell density ,which provide excellent RDSON and gate charge f or most of thesynchronous buck converter a pplications.\n\n The QM6015D meet the RoHS and Green Product r equirement , 100% EAS guaranteedwith full f unct • Advanced high cell density Trench technology.\n• Super LowGate Charge.\n• Excellent CdV/dt effect decline.\n• 100% EAS Guaranteed.\n• Green Device Available.;

UPI

力智电子

QM6015D

P-Channel 60 V (D-S) MOSFET

文件:971.47 Kbytes Page:7 Pages

VBSEMI

微碧半导体

QM6015D

P-Ch 60V Fast Switching MOSFETs

文件:247.43 Kbytes Page:4 Pages

UPI

力智电子

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fas

ADPOW

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Fas

ADPOW

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

QM6015D产品属性

  • 类型

    描述

  • Package Type:

    TO252

  • Configuration:

    Single

  • MOSFET Type:

    P

  • VDS (V):

    -60

  • VGS (V):

    ±20

  • Vth max. (V):

    -2.5

  • RDS(ON) (mΩ)max. at VGS10V:

    25

  • RDS(ON) (mΩ)max. at VGS4.5V:

    33

  • Ciss (pF):

    3635

  • Coss (pF):

    224

  • Crss (pF):

    141

  • Qg(nC):

    25

  • Qgs(nC):

    6.7

  • Qgd(nC):

    5.5

  • ID (A) Tc=25℃:

    -35

  • ID (A) Tc=100℃:

    -27

  • EAS.max(mj):

    162

  • PD(W) Tc=25℃:

    52.1

  • ESD Diode:

    NO

  • Schottky Diode:

    NO

更新时间:2026-5-19 14:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi/台湾微碧
22+
TO-252
20000
公司只做原装 品质保障
UIBQ
20+
TO252
36900
原装优势主营型号-可开原型号增税票
VBsemi/台湾微碧
25+
TO-252
30000
代理全新原装现货,价格优势
U
23+
TO-252
8650
受权代理!全新原装现货特价热卖!
UBIQ
2022+
TO-252
5000
原厂代理 终端免费提供样品
UBIQ
25+
TO-252
789
百分百原装正品 真实公司现货库存 本公司只做原装 可
UBIQ/台湾力祥
25+
90000
全新原装现货
UBIQ
20+
TO-252
300000
现货很近!原厂很远!只做原装
UBIQ/力智
23+
TO252
50000
全新原装正品现货,支持订货
UBIQ
2450+
TO252
6540
只做原厂原装正品终端客户免费申请样品

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