| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
QM6015D | P-Ch 60V Fast Switching MOSFETs The QM6015D is the highest performance trenchP-ch MOSFETs with extremehigh cell density ,which provide excellent RDSON and gate charge f or most of thesynchronous buck converter a pplications.\n\n The QM6015D meet the RoHS and Green Product r equirement , 100% EAS guaranteedwith full f unct • Advanced high cell density Trench technology.\n• Super LowGate Charge.\n• Excellent CdV/dt effect decline.\n• 100% EAS Guaranteed.\n• Green Device Available.; | UPI 力智电子 | ||
QM6015D | P-Channel 60 V (D-S) MOSFET 文件:971.47 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | ||
QM6015D | P-Ch 60V Fast Switching MOSFETs 文件:247.43 Kbytes Page:4 Pages | UPI 力智电子 | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fas | ADPOW | |||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Fas | ADPOW | |||
SCRs 1-70 AMPS NON-SENSITIVE GATE Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip | TECCOR |
QM6015D产品属性
- 类型
描述
- Package Type:
TO252
- Configuration:
Single
- MOSFET Type:
P
- VDS (V):
-60
- VGS (V):
±20
- Vth max. (V):
-2.5
- RDS(ON) (mΩ)max. at VGS10V:
25
- RDS(ON) (mΩ)max. at VGS4.5V:
33
- Ciss (pF):
3635
- Coss (pF):
224
- Crss (pF):
141
- Qg(nC):
25
- Qgs(nC):
6.7
- Qgd(nC):
5.5
- ID (A) Tc=25℃:
-35
- ID (A) Tc=100℃:
-27
- EAS.max(mj):
162
- PD(W) Tc=25℃:
52.1
- ESD Diode:
NO
- Schottky Diode:
NO
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi/台湾微碧 |
22+ |
TO-252 |
20000 |
公司只做原装 品质保障 |
|||
UIBQ |
20+ |
TO252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VBsemi/台湾微碧 |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
U |
23+ |
TO-252 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
UBIQ |
2022+ |
TO-252 |
5000 |
原厂代理 终端免费提供样品 |
|||
UBIQ |
25+ |
TO-252 |
789 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
UBIQ/台湾力祥 |
25+ |
90000 |
全新原装现货 |
||||
UBIQ |
20+ |
TO-252 |
300000 |
现货很近!原厂很远!只做原装 |
|||
UBIQ/力智 |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
UBIQ |
2450+ |
TO252 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
QM6015D规格书下载地址
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