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QM6013D

P-Ch 60V Fast Switching MOSFETs

The QM6013D is the highest performance trenchP-ch MOSFETs with extremehigh cell density ,which provide excellent RDSON and gate chargefor most of thesynchronous buck converterapplications.\n\n The QM6013D meet the RoHS and Green Productrequirement , 100% EAS guaranteedwith fullfunction reli • Advanced high cell density Trench technology.\n• Super LowGate Charge.\n• Excellent CdV/dt effect decline.\n• 100% EAS Guaranteed.\n• Green Device Available.;

UPI

力智电子

QM6013D

P-Ch 60V Fast Switching MOSFETs

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UPI

力智电子

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

ADPOW

Silicon Industrial Rectifier 20 Amp

Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add

NTE

QM6013D产品属性

  • 类型

    描述

  • Package Type:

    TO252

  • Configuration:

    Single

  • MOSFET Type:

    P

  • VDS (V):

    -60

  • VGS (V):

    ±20

  • Vth max. (V):

    -2.5

  • RDS(ON) (mΩ)max. at VGS10V:

    85

  • RDS(ON) (mΩ)max. at VGS4.5V:

    105

  • Ciss (pF):

    1080

  • Coss (pF):

    73

  • Crss (pF):

    50

  • Qg(nC):

    11.8

  • Qgs(nC):

    1.9

  • Qgd(nC):

    6.5

  • ID (A) Tc=25℃:

    -13

  • ID (A) Tc=100℃:

    -8.3

  • ID (A) TA=25℃:

    -3.3

  • ID (A) TA=70℃:

    -2.7

  • EAS.max(mj):

    44

  • PD(W) Tc=25℃:

    31.3

  • PD (W) TA=25℃:

    2

  • ESD Diode:

    NO

  • Schottky Diode:

    NO

更新时间:2026-5-19 21:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UPI/力智
25+
TO252
20300
UPI/力智原装特价QM6013D即刻询购立享优惠#长期有货
UBIQ/力祥半导体
25+
TO-252
640
全新原装正品支持含税
UBIQ
2450+
TO-252
8850
只做原装正品假一赔十为客户做到零风险!!
UBIQ
22+
TO-252
20000
公司只做原装 品质保障
UBIQ
17+
TO-252
643
全新 发货1-2天
UBIQ
20+
TO-252
32500
现货很近!原厂很远!只做原装
UBIQ
2447
TO-252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
UBIQ
2026+
TO-252
26461
原盘原袋现货/3K
UBIQ
23+
TO-252
8560
受权代理!全新原装现货特价热卖!
UBIQ
2022+
TO-252
2500
原厂代理 终端免费提供样品

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