| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
QM6013D | P-Ch 60V Fast Switching MOSFETs The QM6013D is the highest performance trenchP-ch MOSFETs with extremehigh cell density ,which provide excellent RDSON and gate chargefor most of thesynchronous buck converterapplications.\n\n The QM6013D meet the RoHS and Green Productrequirement , 100% EAS guaranteedwith fullfunction reli • Advanced high cell density Trench technology.\n• Super LowGate Charge.\n• Excellent CdV/dt effect decline.\n• 100% EAS Guaranteed.\n• Green Device Available.; | UPI 力智电子 | ||
QM6013D | P-Ch 60V Fast Switching MOSFETs 文件:236.57 Kbytes Page:4 Pages | UPI 力智电子 | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | |||
Silicon Industrial Rectifier 20 Amp Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add | NTE |
QM6013D产品属性
- 类型
描述
- Package Type:
TO252
- Configuration:
Single
- MOSFET Type:
P
- VDS (V):
-60
- VGS (V):
±20
- Vth max. (V):
-2.5
- RDS(ON) (mΩ)max. at VGS10V:
85
- RDS(ON) (mΩ)max. at VGS4.5V:
105
- Ciss (pF):
1080
- Coss (pF):
73
- Crss (pF):
50
- Qg(nC):
11.8
- Qgs(nC):
1.9
- Qgd(nC):
6.5
- ID (A) Tc=25℃:
-13
- ID (A) Tc=100℃:
-8.3
- ID (A) TA=25℃:
-3.3
- ID (A) TA=70℃:
-2.7
- EAS.max(mj):
44
- PD(W) Tc=25℃:
31.3
- PD (W) TA=25℃:
2
- ESD Diode:
NO
- Schottky Diode:
NO
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UPI/力智 |
25+ |
TO252 |
20300 |
UPI/力智原装特价QM6013D即刻询购立享优惠#长期有货 |
|||
UBIQ/力祥半导体 |
25+ |
TO-252 |
640 |
全新原装正品支持含税 |
|||
UBIQ |
2450+ |
TO-252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
UBIQ |
22+ |
TO-252 |
20000 |
公司只做原装 品质保障 |
|||
UBIQ |
17+ |
TO-252 |
643 |
全新 发货1-2天 |
|||
UBIQ |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
UBIQ |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
UBIQ |
2026+ |
TO-252 |
26461 |
原盘原袋现货/3K |
|||
UBIQ |
23+ |
TO-252 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
UBIQ |
2022+ |
TO-252 |
2500 |
原厂代理 终端免费提供样品 |
QM6013D规格书下载地址
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