PLASTIC INFRARED LIGHT EMITTING DIODE

DESCRIPTION The QED22X is an 880nm AlGaAs LED encapsulated in clear, purple tinted, plastic T-1 3/4 package. FEATURES • λ = 880 nm • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Medium Wide Emission Angle, 40° • High Output Powe

AIGAAS INFRARED EMITTING DIODE

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封装/外壳：径向，5mm 直径（T 1 3/4） 包装：散装 描述：EMITTER IR 880NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

AIGAAS INFRARED EMITTING DIODE

丝印代码：N9*；COMMON CATHODE SILICON DUAL SWITCHING DIODE

This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD

SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT

Common Cathode Dual Switching Diode Surface Mount This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board spac

SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available

Field Effect Transistor Dual Gate N-Channel MOSFET

Field Effect Transistor Dual Gate N–Channel MOSFET

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated