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型号 功能描述 生产厂家 企业 LOGO 操作
QED121

PLASTIC INFRARED LIGHT EMITTING DIODE

FEATURES • λ = 880 nm • Chip material = AlGaAs • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18° • High Output Power • Package material and color: Clear, peach tinted, plastic

FAIRCHILD

仙童半导体

QED121

PLASTIC INFRARED LIGHT EMITTING DIODE

FEATURES\n• λ = 880 nm\n• Chip material = AlGaAs\n• Package type: T-1 3/4 (5mm lens diameter)\n• Matched Photosensor: QSD122/123/124\n• Narrow Emission Angle, 18°\n• High Output Power\n• Package material and color: Clear, peach tinted, plastic • λ = 880 nm\n• Chip material = AlGaAs\n• Package type: T-1 3/4 (5mm lens diameter)\n• Matched Photosensor: QSD122/123/124\n• Narrow Emission Angle, 18°\n• High Output Power\n• Package material and color: Clear, peach tinted, plastic;

ONSEMI

安森美半导体

QED121

PLASTIC INFRARED LIGHT EMITTING DIODE

文件:86.81 Kbytes Page:2 Pages

QT

QED121

封装/外壳:径向,5mm 直径(T 1 3/4) 包装:散装 描述:EMITTER IR 880NM 100MA RADIAL 光电器件 LED 发射器 - 红外,紫外,可见光

ONSEMI

安森美半导体

封装/外壳:径向,5mm 直径(T 1 3/4) 包装:卷带(TR)剪切带(CT) 描述:EMITTER IR 880NM 100MA RADIAL 光电器件 LED 发射器 - 红外,紫外,可见光

ONSEMI

安森美半导体

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

MOSEL

茂矽电子

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

NTE

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

PANASONIC

松下

QED121产品属性

  • 类型

    描述

  • 型号

    QED121

  • 功能描述

    红外发射源 T13-4 ALGAAS LED

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 波长

    880 nm

  • 射束角

    +/- 25

  • 最大工作温度

    + 100 C

  • 最小工作温度

    - 40 C

  • 封装/箱体

    Side Looker

  • 封装

    Bulk

更新时间:2026-5-18 11:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
23+
5MM (880nm) 9
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
FAIRCHILD
20+
标准
88720
红外全新原装主营-可开原型号增税票
FAIRCHILDONSEMICONDUCTOR
22+
N/A
12245
现货,原厂原装假一罚十!
三年内
1983
只做原装正品
26+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
FAIRCHILD
25+23+
DIP-2
33117
绝对原装正品全新进口深圳现货
FAIRCHILD/仙童
23+
DIP
50000
全新原装正品现货,支持订货
FAIRCHILDONSEMICONDUCTOR
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
FAIRCHILD
23+24
DIP-2
39870
专业光电传感器,开关,发射管,发光二极等优势原装现
onsemi
25+
径向,5mm
7734
样件支持,可原厂排单订货!

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