PLASTIC INFRARED LIGHT EMITTING DIODE

DESCRIPTION The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. FEATURES • λ = 940 nm • Chip material = GaAs • Package type: T-1 (3mm) • Matched Photosensor: QSC112 • Narrow Emission Angle, 24° • High Output Power • Package material and color: Clear

Plastic Infrared Light Emitting Diode

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GAAS INFRARED EMITTING DIODE

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封装/外壳：径向，3mm 直径（T-1） 包装：散装 描述：EMITTER IR 940NM 50MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

GAAS INFRARED EMITTING DIODE

Plastic Infrared Light Emitting Diode

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JFET Chopper Transistor (N-Channel- Depletion)

JFET Chopper Transistor N–Channel — Depletion

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

POWER TRANSISTORS(2.0A,60-100V,50W)

Operational Amplifiers

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