SURFACE MOUNT INFRARED

FEATURES • Wavelength = 880 nm, AlGaAs • Wide Emission Angle, 120° • Surface Mount PLCC-2 Package • High Power

封装/外壳：2-PLCC 包装：散装 描述：EMITTER IR 880NM 100MA PLCC 光电器件 LED 发射器 - 红外，紫外，可见光

SURFACE MOUNT INFRARED

封装/外壳：2-PLCC 包装：散装 描述：EMITTER IR 880NM 100MA PLCC 光电器件 LED 发射器 - 红外，紫外，可见光

High Voltage Transistors(PNP)

High Voltage Transistors PNP Silicon

High Voltage Transistors(PNP Silicon)

High Voltage Transistors PNP Silicon

RF POWER TRANSISTORS NPN SILICON

The RF Line ​​​​​​​NPN Silicon RF Power Transistor Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 100 W (PEP) Minimum Gain = 10 dB Efficiency = 40 • Intermodulation Distortion @

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping

2.6 mm Series

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