Diode Rectifier-FRED

分立

Planar structure with EPI wafer

文件：287.06 Kbytes Page：8 Pages

Planar structure with EPI wafer

文件：287.06 Kbytes Page：8 Pages

Planar structure with EPI wafer

文件：287.06 Kbytes Page：8 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PLANAR STRUCTURED SUPERFAST RECO 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PLANAR STRUCTURED SUPERFAST RECO 分立半导体产品 二极管 - 整流器 - 单

POWER TRANSISTORS(7A,150-200V,60W)

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A • Packaged in Compact JEDEC TO–220AB

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages