FEATURES

Double internal input matching for easy matching and

high gain

Emitter ballasting resistors for an optimum temperature

profile

Gold metallization ensures excellent reliability.

APPLICATIONS

Base station transmitters in the 900 to 960 MHz range.

DESCRIPTION

Two NPN silicon planar epitaxial transistors in push-pull

contfiguration, intended for linear common emitter

class-AB operation. The device has double internal input

matching. The transistor is encapsulated in a 4-lead

SOT324 flange envelope with a ceramic cap. The flange

provides the common emitter connection for both

transistors.