FEATURES

• Double internal input matching

for easy matching and high gain

• Emitter-ballasting resistors for an

optimum temperature profile

• Gold metallizatlon ensures

excellent reliability.

DESCRIPTION

Two NPN silicon planar epitaxial

transistors in push-pull

configuration, intended for linear

common emitter class-AB operation

in base station transmitters in the

800 to 900 MHz range. The device

has double internal input malching.

The transistor is encapsulated in a

4-lead 80T324 flange envelope with

a ceramic cap. The flange provides

the common emitter connection for

both transistors.