DESCRIPTION

NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap.

FEATURES

• Double stage internal input and output matching

networks for an optimum wideband capability and

high gain

• Polysilicon emitter ballasting resistors for an optimum

temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Common emitter class-AB output stages of television

transmitter amplifiers (sound and vision) operating in

bands 4 and 5 (470 to 860 MHz).