DESCRIPTION

NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.

FEATURES

• Double internal input and output matching for an optimum wideband capability and high gain

• Polysilicon emitter ballasting resistors for an optimum temperature profile

• Gold metallization ensures excellent reliability.

APPLICATION

• Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band.