General description

75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

■ Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply

voltage of 28 V and an IDq of 550 mA:

◆ Output power = 29.5 W (AV)

◆ Gain = 19 dB

◆ Efficiency = 38.5

◆ ACPR400 = −62.5 dBc

◆ ACPR600 = −72 dBc

◆ EVMrms = 1.5

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (1800 MHz to 2000 MHz)

■ Internally matched for ease of use