General description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a

supply voltage of 28 V and an IDq of 950 mA:

◆ Output power = 25 W (AV)

◆ Gain = 18 dB

◆ Efficiency = 32

◆ IMD3 = −37 dBc

◆ ACPR = −40 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (1800 MHz to 2000 MHz)

■ Internally matched for ease of use

Applications

■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and

multi carrier applications in the 1800 MHz to 2000 MHz frequency range.