General description

160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Features

■ Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a

supply voltage of 32 V and an IDq of 1200 mA:

◆ Average output power = 32 W

◆ Power gain = 23 dB

◆ Efficiency = 28

◆ ACPR = −40 dBc

■ Easy power control

■ Integrated ESD protection

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (800 MHz to 1000 MHz)

■ Internally matched for ease of use

Applications

■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and

multi carrier applications in the 800 MHz to 1000 MHz frequency range.