SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • NPN Complement is PZT2222AT1 • The SOT-223 package can be

PNP SILICON TRANSISTOR SURFACE MOUNT

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features • NPN Complement is PZT2222AT1 • The SOT-223 pack

PNP Silicon Epitaxial Transistor

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features • NPN Complement is PZT2222AT1 • The SOT-223 Pa

PNP Silicon Epitaxial Transistor

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features • NPN Complement is PZT2222AT1 • The SOT-223 Pa

PNP Silicon Epitaxial Transistor

文件：108.22 Kbytes Page：4 Pages

PNP Silicon Epitaxial Transistor

文件：108.22 Kbytes Page：4 Pages

PNP Silicon Epitaxial Transistor

文件：108.22 Kbytes Page：4 Pages

双极晶体管 - 双极结型晶体管(BJT) 600mA 60V PNP

封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：TRANS PNP 60V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon Epitaxial Transistor

文件：108.22 Kbytes Page：4 Pages

PNP Silicon Epitaxial Transistor

文件：108.22 Kbytes Page：4 Pages

双极晶体管 - 双极结型晶体管(BJT) 600mA 60V PNP

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c

808 MHz Center Frequency

文件：44.39 Kbytes Page：2 Pages