PNP SILICON TRANSISTOR SURFACE MOUNT

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features • NPN Complement is PZT2222AT1 • The SOT-223 pack

PNP switching transistor

DESCRIPTION PNP switching transistor in a SOT223 plastic package. NPN complement: PZT2222A. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification.

SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • NPN Complement is PZT2222AT1 • The SOT-223 package can be

PNP Silicon Switching Transistors

PNP Silicon Switching Transistors ● High DC current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Complementary types: PZT 2222 (NPN) PZT 2222 A (NPN)

PNP General Purpose Amplifier

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

PNP Silicon Planar Epitaxial Transistor

PNP Silicon Planar Epitaxial Transistor P/b Lead(Pb)-Free

Suface Mount Si-Epitaxial Planar Switching Transistors

• Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Silicon Planar Epitaxial Transistor

PNP Silicon Planar Epitaxial Transistor P/b Lead(Pb)-Free

PNP switching transistor

Silicon Planar Medium Power Transistor

DESCRIPTION • The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications.

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Epitaxial planar die construction • Complementary PNP Type available(PZT2222A)

PNP Transistors

■ Features ● Epitaxial planar die construction ● Complementary to PZT2222A

PNP GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION This UTC PZT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

PNP Plastic-Encapsulate Transistors

Features • Surface Mount SOT-223 Package • Capable of 1Watts of Power Dissipation • Ic:0.6A • Marking:ZT2907A • Operating and Storage Junction Temperatures:-55°C to 150°C • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request by add

PNP Silicon Epitaxial Transistor

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features • NPN Complement is PZT2222AT1 • The SOT-223 Pa

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor

Description The PN2907A, MMBT2907A, and PZT2907A are 60 V-PNP bipolar transistors designed for use as a gen eral-purpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount package (SOT-223), the PZT2907A is ideal for space-constrained systems. T

PNP switching transistor

FEATURES •High current (max. 600 mA) •Low voltage (max. 60 V). APPLICATIONS •Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT223 plastic package. NPN complement: PZT2222A.

SOT-223 Plastic-Encapsulate Transistors

FEATURES Epitaxial planar die construction Complementary PNP Type available(PZT2222A)

PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 60V 0.8A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP General Purpose Amplifier

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PNP GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION This UTC PZT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

PNP GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION This UTC PZT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA.

SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • NPN Complement is PZT2222AT1 • The SOT-223 package can be

PNP SILICON TRANSISTOR SURFACE MOUNT

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features • NPN Complement is PZT2222AT1 • The SOT-223 pack

PNP Silicon Epitaxial Transistor

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features • NPN Complement is PZT2222AT1 • The SOT-223 Pa

PNP Silicon Epitaxial Transistor

PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features • NPN Complement is PZT2222AT1 • The SOT-223 Pa

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Transistors

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Silicon Planar Medium Power Transistor

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PNP TRANSISTOR

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Silicon Planar Medium Power Transistor

文件：178.15 Kbytes Page：2 Pages

PNP Silicon Epitaxial Transistor

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PNP Silicon Epitaxial Transistor

文件：108.22 Kbytes Page：4 Pages

PNP Silicon Epitaxial Transistor

文件：108.22 Kbytes Page：4 Pages

PNP Silicon Epitaxial Transistor

文件：108.22 Kbytes Page：4 Pages

PNP Silicon Epitaxial Transistor

文件：108.22 Kbytes Page：4 Pages

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

60 V PNP General-Purpose Transistor

Features • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) • Maximum Turn-On Time (ton): 45 ns • Maximum Turn-Off Time (toff): 100 ns • Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) Description The PN2907A, MMBT2907A, and

PNP General-Purpose Transistor

Description This device is designed for use with general−purpose amplifiers and switches requiring collector currents to 500 mA. These devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS compliant.

500mA LOW DROPOUT VOLTAGE REGULATOR

GENERAL DESCRIPTION The AMS2907 series of adjustable and fixed voltage regulators are designed to provide 500mA output current and to operate down to 1V input-to-output differential. The dropout voltage of the device is guaranteed maximum 1.3V at maximum output current, decreasing at lower load c

808 MHz Center Frequency

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