L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz • High associated gain Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm • 4 pins super mini mold • Tape & reel packaging only available

GaAs MES FET

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz • High associated gain Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm • 4 pins super mini

TLV761 16-V, 1-A, Fixed Output Linear Voltage Regulator

1 Features • Pin-compatible with industry-standard LM1117 and TLV1117 (x1117) devices in select packages • Input voltage range VIN: 2.5 V to 16 V • Output voltage range VOUT: – 0.8 V to 13 V (fixed, 100-mV steps) • Output current: Up to 1 A • Low quiescent current IQ: – 60 μA (typical, ~1.

GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER

文件：33.42 Kbytes Page：4 Pages

GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER

文件：32.58 Kbytes Page：4 Pages