位置：首页 > IC中文资料 > PTVA120251EA
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PTVA120251EA | Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides ex | WOLFSPEED |   | |
PTVA120251EA | Unmatched input and output 文件：1.30039 Mbytes Page：14 Pages | Infineon 英飞凌 | | |
PTVA120251EA | Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz 文件：876.78 Kbytes Page：14 Pages | Cree 科锐 | | |
PTVA120251EA | Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz 文件：1.6283 Mbytes Page：14 Pages | Infineon 英飞凌 | | |
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides ex | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides ex | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz 文件：1.6283 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
封装/外壳：H-36265-2 包装：卷带（TR） 描述：RF MOSFET LDMOS H-36265-2 分立半导体产品 晶体管 - FET，MOSFET - 射频 | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz 文件：1.6283 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
封装/外壳：H-36265-2 包装：托盘 描述：IC AMP RF LDMOS H-36265-2 分立半导体产品 晶体管 - FET，MOSFET - 射频 | WOLFSPEED | | ||
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz 文件：1.6283 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz 文件：1.6283 Mbytes Page：14 Pages | Infineon 英飞凌 | | ||
Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz 文件：1.6283 Mbytes Page：14 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
21+ |
- |
20000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
|||
Infineon Technologies |
22+ |
H362652 |
9000 |
原厂渠道,现货配单 |
|||
Wolfspeed Inc. |
25+ |
H-36265-2 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
INFINEON |
23+ |
NA |
8000 |
只做原装现货 |
|||
MACOM |
24+ |
5000 |
原装军类可排单 |
||||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/英飞凌 |
23+ |
NA |
89630 |
当天发货全新原装现货 |
|||
Cree/Wolfspeed |
100 |
||||||
InfineonTechnologies |
2022+ |
35 |
全新原装 货期两周 |
PTVA120251EA芯片相关品牌
PTVA120251EA规格书下载地址
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DdatasheetPDF页码索引
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