120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

Silicon Power Schottky Diode

Features • High Surge Capability • Isolated to Plate • Not ESD Sensitive • Types from 45 V to 100V VRRM

Silicon Power Schottky Diode

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封装/外壳：TO-249AB 包装：散装 描述：DIODE MODULE 60V 120A TO249AB 分立半导体产品 二极管 - 整流器 - 阵列

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

Nylon Snap Lock Pins

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CONTINENTAL EUROPE CORD SET CEE 7/7 STRAIGHT TO IEC 60320 C19

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POWER MOS V

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