SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive

HIGH POWER -SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types up to 100 V VRRM

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

Silicon Schottky Diode, 120A

Features • Guard Ring Protection • Low forward voltage drop • High surge current capability • Up to 100V VRRM

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

HIGH POWER -SCHOTTKY RECTIFIERS

Features • High Surge Capability • Types up to 100 V VRRM

SCHOTTKY DIODES MODULE TYPE 120A

Features High Surge Capability Types Up to 100V VRRM

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 60V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Power Schottky Diode

文件：723.92 Kbytes Page：3 Pages

Silicon Power Schottky Diode

文件：723.92 Kbytes Page：3 Pages

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 60V 120A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

CONTINENTAL EUROPE CORD SET CEE 7/7 STRAIGHT TO IEC 60320 C19

文件：48.14 Kbytes Page：1 Pages

Nylon Snap Lock Pins

文件：147.6 Kbytes Page：1 Pages

POWER MOS V

文件：121.63 Kbytes Page：4 Pages