10-A, 12-V INPUT NON-ISOLATED WIDE-OUTPUT ADJUST POWER MODULE

1FEATURES 2· Up to 10-A Output Current · 12-V Input Voltage · Wide-Output Voltage Adjust (1.2 V to 5.5 V/(0.8 V to 1.8 V) · Efficiencies up to 95% · 225 W/in3 Power Density · Output Voltage Sense · Margin Up/Down Controls · Undervoltage Lockout · Auto-Track™ Sequencing · Pre-Bias St

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden

CONTINENTAL EUROPE CORD SET CEE 7/7 STRAIGHT TO IEC 60320 C19

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POWER MOS V

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