型号 功能描述 生产厂家 企业 LOGO 操作

High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

Infineon

英飞凌

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. Features • Broadband

Cree

科锐

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

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Infineon

英飞凌

更新时间:2025-12-31 12:07:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
INFINEON/英飞凌
24+
NA/
4243
原厂直销,现货供应,账期支持!
INFINEON
2023+
5800
进口原装,现货热卖
INFINEON
23+
8000
只做原装现货
INFINEON/英飞凌
23+
TO-59
8510
原装正品代理渠道价格优势
INFINEON/英飞凌
23+
H-37275-6
50000
全新原装正品现货,支持订货
Infineon Technologies
22+
H372756/2
9000
原厂渠道,现货配单
INFINEON TECHNOLOGIES
24+
N/A
786
原装原装原装
Cree/Wolfspeed
100
INFINEON/英飞凌
23+
H-37275-6
89630
当天发货全新原装现货

PTFB213004EXL数据表相关新闻