High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. Features • Typical two-carrier

High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz

General Purpose Transistors (700 MHz to 2700 MHz)

封装/外壳：10-LDFN 裸露焊盘 包装：散装 描述：FET RF LDMOS 8W SON10 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF MOSFET TRANSISTORS

包装：管件 描述：IC AMP RF LDMOS 10-SON 分立半导体产品 晶体管 - FET，MOSFET - 射频