Description

The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.

Features

• Typical two-carrier WCDMA performance,

8 dB PAR

- POUT = 33 dBm Avg

- ACPR = –40 dBc

• Typical CW performance, 940 MHz, 28 V

- POUT = 40 dBm

- Efficiency = 59

- Gain = 20 dB

• Typical CW performance, 2140 MHz, 28 V

- POUT = 40 dBm

- Efficiency = 50

- Gain = 15 dB

• Capable of handling 10:1 VSWR @ 28 V, 8 W

(CW) output power

• Integrated ESD protection : Human Body Model,

Class 2 (minimum)

• Excellent thermal stability

• Pb-free and RoHS compliant